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Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:47/1  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1320Kb)  |  Favorite  |  View/Download:81/0  |  Submit date:2018/07/06
65nm  负偏压温度不稳定性  沟道宽度  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1450Kb)  |  Favorite  |  View/Download:53/1  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
Adobe PDF(686Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2017/12/14
辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
Adobe PDF(1075Kb)  |  Favorite  |  View/Download:128/1  |  Submit date:2016/06/02
双极线性稳压器  辐射效应  辐照温度  
Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
Authors:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰);  Guo Q(郭旗)
Adobe PDF(743Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2017/10/12
Online and offline test method of total dose radiation damage on static random access memory 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 8, 页码: 329-335
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Wang, Bo;  Ma, Wu-Ying;  Ma, Li-Ya;  Zhou, Hang
Adobe PDF(3161Kb)  |  Favorite  |  View/Download:158/0  |  Submit date:2014/11/11
Online-test  Offline-test  Static Random Access Memory  Functional Test  
典型器件和电路不同剂量率的辐射效应 期刊论文
信息与电子工程, 2012, 卷号: 10, 期号: 4, 页码: 484-489
Authors:  陆妩;  任迪远;  郑玉展;  王义元;  郭旗;  余学峰;  何承发
Adobe PDF(1169Kb)  |  Favorite  |  View/Download:226/14  |  Submit date:2012/11/29
双极类模拟电路  Cmos类电路  60coγ辐照  剂量率效应  
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 64-67
Authors:  Cui, Jiangwei;  Xue, Yaoguo;  Yu, Xuefeng;  Ren, Diyuan;  Lu, Jian;  Zhang, Xingyao
Adobe PDF(288Kb)  |  Favorite  |  View/Download:128/0  |  Submit date:2014/11/11
静态随机存储器总剂量辐射及退火效应研究 期刊论文
原子能科学技术, 2012, 卷号: 46, 期号: 4, 页码: 507-512
Authors:  李明;  余学峰;  许发月;  李茂顺;  高博;  崔江维;  周东;  席善斌;  王飞
Adobe PDF(265Kb)  |  Favorite  |  View/Download:237/9  |  Submit date:2012/11/29
静态随机存储器  总剂量效应  功耗电流  退火效应