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Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
Authors:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰);  Guo Q(郭旗)
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Preparation and thermal-sensitive characteristic of copper doped n-type silicon material 期刊论文
Journal of Semiconductors, 2015, 卷号: 36, 期号: 1, 页码: 013004 (4 pp.)
Authors:  Fan Yanwei;  Zhou Bukang;  Wang Junhua;  Chen Zhaoyang;  Chang Aimin
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3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4, 页码: 60-65
Authors:  Jinxin, Zhang;  Hongxia, Guo;  Lin, Wen;  Qi, Guo;  Jiangwei, Cui;  Xin, Wang;  Wei, Deng;  Qiwen, Zhen;  Xue, Fan;  Yao, Xiao;  Hongxia, G.
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Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 1
Authors:  Wu, Xue;  Lu, Wu;  Wang, Yiyuan;  Xu, Jialing;  Zhang, Leqing;  Lu, Jian;  Yu, Xin;  Zhang, Xingyao;  Hu, Tianle;  Lu, W
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Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 64-67
Authors:  Cui, Jiangwei;  Xue, Yaoguo;  Yu, Xuefeng;  Ren, Diyuan;  Lu, Jian;  Zhang, Xingyao
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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 5, 页码: 0540041-0540044
Authors:  Bo Lan;  Qi Guo;  Jing Sun;  Jiangwei Cui;  Maoshun Li;  Rui Chen;  Wuxiong Fei;  Yun Zhao
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Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 4, 页码: 41-45
Authors:  Gao, Bo;  Yu, Xuefeng;  Ren, Diyuan;  Liu, Gang;  Wang, Yiyuan;  Sun, Jing;  Cui, Jiangwei
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Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 3
Authors:  Yuzhan, Zheng;  Wu, Lu;  Diyuan, Ren;  Yiyuan, Wang;  Zhikuan, Wang;  Yonghui, Yang;  Wu, L.
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Annealing behavior of radiation damage in JFET-input operational amplifiers 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 5, 页码: 60-64
Authors:  Zheng, Yuzhan;  Lu, Wu;  Ren, Diyuan;  Wang, Yiyuan;  Guo, Qi;  Yu, Xuefeng
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Jfet-input Operational Amplifiers  Dose Rate  Radiation Damage  Annealing Behavior  
NTC and electrical properties of nickel and gold doped n-type silicon material 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 8, 页码: 52-55
Authors:  Dong, Maojin;  Chen, Zhaoyang;  Fan, Yanwei;  Wang, Junhua;  Tao, Mingde;  Cong, Xiuyun
Adobe PDF(390Kb)  |  Favorite  |  View/Download:118/0  |  Submit date:2014/11/11
Deep Level Impurities  Nickel  Gold  Ntc  Electrical Properties