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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa
Adobe PDF(260Kb)  |  Favorite  |  View/Download:220/10  |  Submit date:2012/11/29
Emitter Area  Domestic Npn Transistors  Dose Rate  Radiation Damage  
不同剂量率下MOSFET的电离辐照效应 会议论文
, 重庆, 2007
Authors:  张华林;  陆妩;  任迪远;  余学峰;  郭旗
Adobe PDF(241Kb)  |  Favorite  |  View/Download:151/1  |  Submit date:2013/04/09
Mosfet  电离辐照  数字集成电路  阈电压漂移  
预先老化对注FnMOS器件辐射可靠性的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 1, 页码: 111-114
Authors:  崔帅;  余学峰;  任迪远;  张华林;  艾尔肯
Adobe PDF(154Kb)  |  Favorite  |  View/Download:240/17  |  Submit date:2012/11/29
预先老化  辐照  注f  可靠性  
预先老化对注FnMOS器件辐射可靠性的影响 期刊论文
半导体学报, 2005, 期号: 1, 页码: 111-114
Authors:  崔帅;  余学峰;  任迪远;  张华林;  艾尔肯
Adobe PDF(154Kb)  |  Favorite  |  View/Download:159/11  |  Submit date:2012/11/29
预先老化  辐照  注f  可靠性  
双极晶体管的低剂量率电离辐射效应 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1675-1679
Authors:  张华林;  陆妩;  任迪远;  郭旗;  余学锋;  何承发;  艾尔肯;  崔帅
Adobe PDF(170Kb)  |  Favorite  |  View/Download:212/8  |  Submit date:2012/11/29
低剂量率  电离辐射  双极晶体管  空间电荷