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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
典型光电器件总剂量辐照效应试验研究 会议论文
, 沈阳, 2009
Authors:  吾勤之;  许导进;  刘伟鑫;  于跃;  郭旗;  孙静
Adobe PDF(280Kb)  |  Favorite  |  View/Download:180/1  |  Submit date:2013/04/09
总剂量效应  光电器件  氧化物陷阱电荷  界面态陷阱电荷  红外发光二极管  损伤机理  
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa
Adobe PDF(260Kb)  |  Favorite  |  View/Download:220/10  |  Submit date:2012/11/29
Emitter Area  Domestic Npn Transistors  Dose Rate  Radiation Damage  
光致荧光材料CaS:Eu,Sm在辐射剂量测量中的应用 期刊论文
核电子学与探测技术, 2008, 卷号: 28, 期号: 6, 页码: 1177-1180,1225
Authors:  刘艳平;  陈朝阳;  范艳伟;  巴维真;  郭旗;  潘世列
Adobe PDF(470Kb)  |  Favorite  |  View/Download:171/11  |  Submit date:2012/11/29
光致荧光  辐射剂量  剂量响应  剂量计  
光致荧光材料CaS:Eu,Sm在辐射剂量测量中的应用 期刊论文
核电子学与探测技术, 2008, 卷号: 28, 期号: 6, 页码: 1177-1180,1225
Authors:  刘艳平;  陈朝阳;  范艳伟;  巴维真;  郭旗;  潘世列
Adobe PDF(470Kb)  |  Favorite  |  View/Download:205/11  |  Submit date:2012/11/29
光致荧光  辐射剂量  剂量响应  剂量计  
不同剂量率下MOSFET的电离辐照效应 会议论文
, 重庆, 2007
Authors:  张华林;  陆妩;  任迪远;  余学峰;  郭旗
Adobe PDF(241Kb)  |  Favorite  |  View/Download:151/1  |  Submit date:2013/04/09
Mosfet  电离辐照  数字集成电路  阈电压漂移  
双极晶体管的低剂量率电离辐射效应 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1675-1679
Authors:  张华林;  陆妩;  任迪远;  郭旗;  余学锋;  何承发;  艾尔肯;  崔帅
Adobe PDF(170Kb)  |  Favorite  |  View/Download:212/8  |  Submit date:2012/11/29
低剂量率  电离辐射  双极晶体管  空间电荷