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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa
Adobe PDF(260Kb)  |  Favorite  |  View/Download:220/10  |  Submit date:2012/11/29
Emitter Area  Domestic Npn Transistors  Dose Rate  Radiation Damage  
双极晶体管不同温度的退火效应与机理 期刊论文
核电子学与探测技术, 2007, 卷号: 27, 期号: 1, 页码: 150-153
Authors:  汪东;  陆妩;  任迪远;  李爱武;  匡治兵;  张华林
Adobe PDF(240Kb)  |  Favorite  |  View/Download:174/15  |  Submit date:2012/11/29
双极晶体管  退火效应  界面态  
不同剂量率下MOSFET的电离辐照效应 会议论文
, 重庆, 2007
Authors:  张华林;  陆妩;  任迪远;  余学峰;  郭旗
Adobe PDF(241Kb)  |  Favorite  |  View/Download:151/1  |  Submit date:2013/04/09
Mosfet  电离辐照  数字集成电路  阈电压漂移  
JFET输入运算放大器的增强辐射损伤方法研究 期刊论文
核技术, 2006, 卷号: 29, 期号: 8, 页码: 627-630
Authors:  高嵩;  陆妩;  任迪远;  牛振红;  刘刚
Adobe PDF(305Kb)  |  Favorite  |  View/Download:170/13  |  Submit date:2012/11/29
运算放大器  结型场效应管  辐射损伤  低剂量率  加速评估  
双极晶体管的低剂量率电离辐射效应 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1675-1679
Authors:  张华林;  陆妩;  任迪远;  郭旗;  余学锋;  何承发;  艾尔肯;  崔帅
Adobe PDF(170Kb)  |  Favorite  |  View/Download:212/8  |  Submit date:2012/11/29
低剂量率  电离辐射  双极晶体管  空间电荷