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Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7
Authors:  Xi Shan-Bin;  Lu Wu;  Wang Zhi-Kuan;  Ren Di-Yuan;  Zhou Dong;  Wen Lin;  Sun Jing
Adobe PDF(1061Kb)  |  Favorite  |  View/Download:229/5  |  Submit date:2012/11/29
Subthreshold-current Technique  Gate Control  Lateral Pnp Bipolar Transistor  Charge Separation  
Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 23, 页码: 374-380
Authors:  Xi Shan-Bin;  Lu Wu;  Ren Di-Yuan;  Zhou Dong;  Wen Lin;  Sun Jing;  Wu Xue
Adobe PDF(700Kb)  |  Favorite  |  View/Download:128/1  |  Submit date:2013/11/07
Gate Sweep Technique  Gate Control  Lateral Pnp Bipolar Transistor  Charge Separation  
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa
Adobe PDF(260Kb)  |  Favorite  |  View/Download:220/10  |  Submit date:2012/11/29
Emitter Area  Domestic Npn Transistors  Dose Rate  Radiation Damage