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CCD及CMOS图像传感器的质子位移损伤等效分析 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 2, 页码: 44-48
Authors:  于新;  荀明珠;  郭旗;  何承发;  李豫东;  文林;  张兴尧;  周东
Adobe PDF(938Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2019/07/29
位移损伤效应  非电离能量损失  CCD  CMOS  
Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa)
Adobe PDF(455Kb)  |  Favorite  |  View/Download:85/0  |  Submit date:2016/12/13
Complementary Metal Oxide Semiconductor Image Sensor  Total Ionizing Dose Radiation Effect  Pinned Photodiode  Full Well Chargecapacity  
基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究 期刊论文
物理学报, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  王帆;  李豫东;  郭旗;  汪波;  张兴尧;  文林;  何承发
Adobe PDF(590Kb)  |  Favorite  |  View/Download:171/0  |  Submit date:2016/03/01
互补金属氧化物半导体图像传感器  电离总剂量效应  钳位二极管  满阱容量  
电荷耦合器件的γ辐照剂量率效应研究 期刊论文
发光学报, 2016, 卷号: 37, 期号: 6, 页码: 711-719
Authors:  武大猷;  文林;  汪朝敏;  何承发;  郭旗;  李豫东;  曾俊哲;  汪波;  刘元
Adobe PDF(678Kb)  |  Favorite  |  View/Download:100/0  |  Submit date:2016/12/03
电荷耦合器件  暗信号  低剂量率损伤增强效应  暗场像素统计