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基于钴源辐照的光释光测年方法研究 期刊论文
科技视界, 2018, 期号: 11, 页码: 91-93
Authors:  邹德洋;  何承发;  陆妩;  张峰;  葛本伟
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钴源  光释光测年  石英  能量沉积  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
PNP输入双极运算放大器在不同辐射环境下的辐射效应和退火特性 期刊论文
物理学报, 2013, 卷号: 62, 期号: 7, 页码: 325-330
Authors:  胡天乐;  陆妩;  席善斌;  郭旗;  何承发;  吴雪;  王信
Adobe PDF(260Kb)  |  Favorite  |  View/Download:204/0  |  Submit date:2013/06/14
Pnp输入双极运算放大器  电子和60coγ源  偏置条件  退火  
High tolerance of proton irradiation of Ge2Sb2Te5 phase change material 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 卷号: 575, 期号: 10, 页码: 229-232
Authors:  Zhou Dong;  Wu Liangcai;  Guo Qi;  Peng Cheng;  He Chengfa;  Song Zhitang;  Rao Feng;  Li Yudong;  Xi Shanbin
Adobe PDF(1590Kb)  |  Favorite  |  View/Download:162/0  |  Submit date:2013/11/07
Phase Change Material  Ge2sb2te5  Proton Irradiation  Radiation Damage  
Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 57-63
Authors:  Wang, Xin;  Lu, Wu;  Guo, Qi;  Wu, Xue;  Xi, Shanbin;  Deng, Wei;  Cui, Jiangwei;  Zhang, Jinxin
Adobe PDF(1131Kb)  |  Favorite  |  View/Download:134/0  |  Submit date:2014/11/11
Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 1
Authors:  Wu, Xue;  Lu, Wu;  Wang, Yiyuan;  Xu, Jialing;  Zhang, Leqing;  Lu, Jian;  Yu, Xin;  Zhang, Xingyao;  Hu, Tianle;  Lu, W
Adobe PDF(701Kb)  |  Favorite  |  View/Download:167/0  |  Submit date:2014/11/11
Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 13
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Xi Shan-Bin;  Guo Qi;  Li Yu-Dong
Adobe PDF(921Kb)  |  Favorite  |  View/Download:286/0  |  Submit date:2013/11/07
0.18 Mu m  Narrow-channel Nmos Transistor  60co Gamma  Rince  
synthesis and luminescence in limgpo4:tb,sm,b phosphors with possible applications in real-time dosimetry 期刊论文
JOURNAL OF RARE EARTHS, 2013, 卷号: 31, 期号: 6, 页码: 551-554
Authors:  Gai Minqiang;  Chen Zhaoyang;  Fan Yanwei;  Wang Junhua;  Chen, ZY
Adobe PDF(732Kb)  |  Favorite  |  View/Download:154/1  |  Submit date:2013/11/07
Dosimetry  Optic-fibre  Limgpo4:Tb  Osl  b  Real-time  Rare Earths  
CaS:Eu,Sm荧光粉表面二氧化硅包覆对其光激励发光特性的影响(英文) 期刊论文
发光学报, 2013, 卷号: 34, 期号: 5, 页码: 547-553
Authors:  盖敏强;  陈朝阳;  范艳伟;  王军华;  谢永新
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光激励发光  Cas:Eu  二氧化硅包覆  Sm  溶胶凝胶法  
The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 2, 页码: -
Authors:  Cui Jiang-Wei;  Yu Xue-Feng;  Ren Di-Yuan;  Lu Jian;  Cui, JW
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Sub-micro  Total Dose Irradiation  Hot-carrier Effect