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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
Adobe PDF(713Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2018/05/07
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:43/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
Adobe PDF(1075Kb)  |  Favorite  |  View/Download:128/1  |  Submit date:2016/06/02
双极线性稳压器  辐射效应  辐照温度  
Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
Authors:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰);  Guo Q(郭旗)
Adobe PDF(743Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2017/10/12
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:68/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 期刊论文
Chinese Physics B, 2014, 卷号: 23, 期号: 10, 页码: 366-372
Authors:  Zheng, Qi-Wen;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Guo, Qi;  Ren, Di-Yuan;  Cong, Zhong-Chao;  Zhou, Hang
Adobe PDF(473Kb)  |  Favorite  |  View/Download:190/0  |  Submit date:2014/11/11
Total Dose Irradiation  Static Random Access Memory  Pattern Imprinting  Deep Sub-micron  
Thermodynamic impact on total dose effect for semiconductor components 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2014, 卷号: 35, 期号: 4, 页码: 465-469
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Zhou, Hang
Adobe PDF(448Kb)  |  Favorite  |  View/Download:172/0  |  Submit date:2014/11/11
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 12
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Zhou, H (Zhou Hang);  Ren, DY (Ren Di-Yuan);  Yu, XF
Adobe PDF(605Kb)  |  Favorite  |  View/Download:21/0  |  Submit date:2017/09/21