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Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
Adobe PDF(522Kb)  |  Favorite  |  View/Download:61/0  |  Submit date:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
Adobe PDF(1371Kb)  |  Favorite  |  View/Download:60/0  |  Submit date:2018/06/20
Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
Adobe PDF(950Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/05/14
Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
Authors:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin);  He, CF (He, Chengfa);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mohan);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xinyu)查看 ResearcherID 和 ORCID
Adobe PDF(1644Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2018/07/24
Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
Adobe PDF(713Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2018/05/07
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 8, 页码: 1-4
Authors:  Yu, X (Yu, Xin)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Yao, S (Yao, Shuai)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Sun, J (Sun, Jing)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Liu, MH (Liu, Mo-Han)[ 1,2 ];  Li, XL (Li, Xiao-Long)[ 1,2,3 ]
Adobe PDF(759Kb)  |  Favorite  |  View/Download:47/0  |  Submit date:2018/10/19
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
Adobe PDF(1496Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/11/20
Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
Adobe PDF(567Kb)  |  Favorite  |  View/Download:43/0  |  Submit date:2018/11/20
Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency  
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
Authors:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Liu, Y (Liu, Yuan);  Zeng, JZ (Zeng, Junzhe);  Zhang, X (Zhang, Xiang);  Wang, TH (Wang, Tianhui)
Adobe PDF(705Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency