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辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
科学级帧转移电荷耦合成像器件位移损伤效应与机理研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  曾骏哲
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电荷耦合器件  位移损伤  位移缺陷  低温测试  仿真模拟  
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
Authors:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Liu, Y (Liu, Yuan);  Zeng, JZ (Zeng, Junzhe);  Zhang, X (Zhang, Xiang);  Wang, TH (Wang, Tianhui)
Adobe PDF(705Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency  
CMOS有源像素图像传感器的电子辐照损伤效应研究 期刊论文
发光学报, 2017, 卷号: 38, 期号: 2, 页码: 182-187
Authors:  玛丽娅;  李豫东;  郭旗;  刘昌举;  文林;  汪波
Adobe PDF(599Kb)  |  Favorite  |  View/Download:107/1  |  Submit date:2017/02/23
电子辐照  Cmos有源像素传感器  暗信号  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
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Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation