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典型运放、比较器的电离与位移辐射损伤效应 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  姜柯
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60coγ辐照源  质子辐射  电子辐射  中子辐射  双极器件  辐射效应  
SiGe HBT单粒子效应敏感区域分布与加固设计研究 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  李培
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不同结构sige Hbt  单粒子效应  三维数值模拟仿真  激光微束试验  伪集电极加固  
偏置条件对NPN型锗硅异质结双极晶体管电离辐射效应的影响 期刊论文
核技术, 2015, 卷号: 38, 期号: 6, 页码: 38-44
Authors:  刘默寒;  陆妩;  马武英;  王信;  郭旗;  何承发;  姜柯
Adobe PDF(1646Kb)  |  Favorite  |  View/Download:128/0  |  Submit date:2015/09/10
锗硅异质结双极晶体管  总剂量效应  偏置条件  退火  
电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性 期刊论文
物理学报, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  姜柯;  陆妩;  胡天乐;  王信;  郭旗;  何承发;  刘默涵;  李小龙
Adobe PDF(844Kb)  |  Favorite  |  View/Download:119/0  |  Submit date:2015/09/09
Npn输入双极运算放大器  电子辐射  辐射效应  退火  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
Adobe PDF(362Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/01/25
Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress