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Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa)
Adobe PDF(455Kb)  |  Favorite  |  View/Download:85/0  |  Submit date:2016/12/13
Complementary Metal Oxide Semiconductor Image Sensor  Total Ionizing Dose Radiation Effect  Pinned Photodiode  Full Well Chargecapacity  
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:68/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
Adobe PDF(406Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
Adobe PDF(362Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/01/25
Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
Research on dark signal degradation in Co-60 gamma-ray-irradiated CMOS active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 5
Authors:  Wang Bo;  Li Yu-Dong;  Guo Qi;  Liu Chang-Ju;  Wen Lin;  Ma Li-Ya;  Sun Jing;  Wang Hai-Jiao;  Cong Zhong-Chao;  Ma Wu-Ying
Adobe PDF(390Kb)  |  Favorite  |  View/Download:162/0  |  Submit date:2014/11/11
Cmos Aps  Dark Signal  Co-60 Gamma-rays  Damage Mechanism  
Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 13
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Xi Shan-Bin;  Guo Qi;  Li Yu-Dong
Adobe PDF(921Kb)  |  Favorite  |  View/Download:286/0  |  Submit date:2013/11/07
0.18 Mu m  Narrow-channel Nmos Transistor  60co Gamma  Rince  
The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 2, 页码: -
Authors:  Cui Jiang-Wei;  Yu Xue-Feng;  Ren Di-Yuan;  Lu Jian;  Cui, JW
Adobe PDF(627Kb)  |  Favorite  |  View/Download:168/4  |  Submit date:2012/11/29
Sub-micro  Total Dose Irradiation  Hot-carrier Effect