XJIPC OpenIR
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In0.22Ga0.78As/GaAs量子阱光致发光谱电子辐照效应研究 期刊论文
光学学报, 2017, 卷号: 37, 期号: 2, 页码: 0216002-1-0216002-8
Authors:  玛丽娅;  郭旗;  艾尔肯;  李豫东;  李占行;  文林;  周东
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辐射  损伤  光致发光谱  量子阱  
电荷耦合器件中子辐照诱发的位移效应 期刊论文
发光学报, 2016, 卷号: 37, 期号: 1, 页码: 44-49
Authors:  汪波;  李豫东;  郭旗;  汪朝敏;  文林
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电荷耦合器件  中子辐照  位移效应  电荷转移效率  暗信号  
温度对4管像素结构CMOS图像传感器性能参数的影响 期刊论文
发光学报, 2016, 卷号: 37, 期号: 3, 页码: 332-337
Authors:  王帆;  李豫东;  郭旗;  汪波;  张兴尧
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Cmos图像传感器  转换增益  满阱容量  暗电流  温度  
电荷耦合器件的γ辐照剂量率效应研究 期刊论文
发光学报, 2016, 卷号: 37, 期号: 6, 页码: 711-719
Authors:  武大猷;  文林;  汪朝敏;  何承发;  郭旗;  李豫东;  曾俊哲;  汪波;  刘元
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电荷耦合器件  暗信号  低剂量率损伤增强效应  暗场像素统计  
Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 15, 页码: 252-258
Authors:  Ma, LY (Ma Li-Ya);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Ai, EK (Ai Er-Ken);  Wang, HJ (Wang Hai-Jiao);  Wang, B (Wang Bo);  Zeng, JZ (Zeng Jun-Zhe)
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In0.53ga0.47as/inp  Quantum Well  Electron Beam Irradiation  Photoluminescence  
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199
Authors:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin);  Ren, DY (Ren Di-Yuan);  Zeng, JZ (Zeng Jun-Zhe);  Ma, LY (Ma Li-Ya)
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Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect  
质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究 期刊论文
物理学报, 2015, 卷号: 64, 期号: 8, 页码: 193-199
Authors:  汪波;  李豫东;  郭旗;  刘昌举;  文林;  任迪远;  曾骏哲;  玛丽娅
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互补金属氧化物半导体有源像素传感器  暗信号  质子辐射  位移效应  
电子辐照深亚微米MOS晶体管的总剂量效应简 期刊论文
微电子学, 2015, 卷号: 45, 期号: 4, 页码: 537-540+544
Authors:  文林;  李豫东;  郭旗;  孙静;  任迪远;  崔江维;  汪波;  玛丽娅
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深亚微米  Nmosfet  电子辐照  总剂量效应  
质子与中子辐照对电荷耦合器件暗信号参数的影响及其效应分析 期刊论文
物理学报, 2015, 卷号: 64, 期号: 19, 页码: 173-180
Authors:  曾骏哲;  李豫东;  文林;  何承发;  郭旗;  汪波;  玛丽娅;  魏莹;  王海娇;  武大猷;  王帆;  周航
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电荷耦合器件  质子辐照  中子辐照  输运仿真  
深亚微米N沟道MOS晶体管的总剂量效应 期刊论文
微电子学, 2015, 卷号: 45, 期号: 5, 页码: 666-669
Authors:  文林;  李豫东;  郭旗;  孙静;  任迪远;  崔江维;  汪波;  玛丽娅
Adobe PDF(508Kb)  |  Favorite  |  View/Download:85/0  |  Submit date:2016/06/07
深亚微米  Nmosfet  总剂量效应  窄沟效应