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总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
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65 Nm Nmosfet  总剂量效应  热载流子效应  
纳米PMOSFET负偏压温度不稳定性测试方法 期刊论文
固体电子学研究与进展, 2017, 卷号: 37, 期号: 6, 页码: 433-437
Authors:  崔江维;  郑齐文;  余徳昭;  周航;  苏丹丹;  马腾;  郭旗;  余学峰
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纳米器件  P沟道金属氧化物半导体场效应晶体管  负偏压温度不稳定性  
总剂量效应致0.13μm部分耗尽绝缘体上硅N型金属氧化物半导体场效应晶体管热载流子增强效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 9, 页码: 242-249
Authors:  周航;  郑齐文;  崔江维;  余学峰;  郭旗;  任迪远;  余德昭;  苏丹丹
Adobe PDF(808Kb)  |  Favorite  |  View/Download:130/0  |  Submit date:2016/06/02
绝缘体上硅  电离辐射  热载流子  
辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
Adobe PDF(1075Kb)  |  Favorite  |  View/Download:128/1  |  Submit date:2016/06/02
双极线性稳压器  辐射效应  辐照温度  
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:68/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Thermodynamic impact on total dose effect for semiconductor components 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2014, 卷号: 35, 期号: 4, 页码: 465-469
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Zhou, Hang
Adobe PDF(448Kb)  |  Favorite  |  View/Download:173/0  |  Submit date:2014/11/11
PMOSFET低剂量率辐射损伤增强效应研究 期刊论文
原子能科学技术, 2013, 卷号: 47, 期号: 5, 页码: 848-853
Authors:  高博;  刘刚;  王立新;  韩郑生;  余学峰;  任迪远;  孙静
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Pmosfet  退火效应  低剂量率辐射损伤增强效应  
Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6
Authors:  Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Cui Jiang-Wei;  Lan Bo;  Li Ming;  Wang Yi-Yuan;  Yu, XF
Adobe PDF(352Kb)  |  Favorite  |  View/Download:160/1  |  Submit date:2012/11/29
P-type Metal-oxide-semiconductor Field-effect Transistor  Co-60 Gamma-ray  Total-dose Irradiation Damage Effects  Enhanced Low Dose Rate Sensitivity  
不同偏置条件下CMOS SRAM的总剂量辐射效应 期刊论文
微电子学, 2011, 卷号: 41, 期号: 1, 页码: 128-132
Authors:  李茂顺;  余学峰;  任迪远;  郭旗;  李豫东;  高博;  崔江维;  兰博;  费武雄;  陈睿;  赵云
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静态随机存取存储器  总剂量辐照  偏置条件  
p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究 期刊论文
物理学报, 2011, 卷号: 60, 期号: 6, 页码: 812-818
Authors:  高博;  余学峰;  任迪远;  崔江维;  兰博;  李明;  王义元
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P型金属氧化物半导体场效应晶体管  60coγ射线  电离辐射损伤  低剂量率辐射损伤增强效应