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Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:68/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
Adobe PDF(406Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory  
Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 15, 页码: 252-258
Authors:  Ma, LY (Ma Li-Ya);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Ai, EK (Ai Er-Ken);  Wang, HJ (Wang Hai-Jiao);  Wang, B (Wang Bo);  Zeng, JZ (Zeng Jun-Zhe)
Adobe PDF(726Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/01/25
In0.53ga0.47as/inp  Quantum Well  Electron Beam Irradiation  Photoluminescence  
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199
Authors:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin);  Ren, DY (Ren Di-Yuan);  Zeng, JZ (Zeng Jun-Zhe);  Ma, LY (Ma Li-Ya)
Adobe PDF(430Kb)  |  Favorite  |  View/Download:33/0  |  Submit date:2018/01/26
Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
Adobe PDF(362Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/01/25
Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 7
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  He, YJ (He Yu-Juan);  Wang, X (Wang Xin);  Yue, L (Yue Long);  En, YF (En Yun-Fei);  Liu, MH (Liu Mo-Han)
Adobe PDF(507Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2018/01/26
SilicOn On Insulator  Partially Depleted  Ionizing Radiation  Low Frequency Noise  
Effects of proton and neutron irradiation on dark signal of charge-coupled device 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 19
Authors:  Zeng, JZ (Zeng Jun-Zhe);  Li, YD (Li Yu-Dong);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Maria (Maria);  Wei, Y (Wei Yin);  Wang, HJ (Wang Hai-Jiao);  Wu, DY (Wu Da-You);  Wang, F (Wang Fan);  Zhou, H (Zhou Hang);  Wen, L
Adobe PDF(345Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2018/01/24
Charge Coupled Devices  Proton Irradiation  Neutron Irradiation  Transport Simulation  
Research on dark signal degradation in Co-60 gamma-ray-irradiated CMOS active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 5
Authors:  Wang Bo;  Li Yu-Dong;  Guo Qi;  Liu Chang-Ju;  Wen Lin;  Ma Li-Ya;  Sun Jing;  Wang Hai-Jiao;  Cong Zhong-Chao;  Ma Wu-Ying
Adobe PDF(390Kb)  |  Favorite  |  View/Download:162/0  |  Submit date:2014/11/11
Cmos Aps  Dark Signal  Co-60 Gamma-rays  Damage Mechanism  
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
Authors:  Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen);  Li, P (Li Pei);  Wang, X (Wang Xin)
Adobe PDF(903Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2018/02/01
Sige Heterojunction Bipolar Transistor  Different Bias  Single Event Effect  3d Numerical Simulation  
serial ferroelectric memory ionizing radiation effects and annealing characteristics 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 15, 页码: 347-352
Authors:  Zhang Xing-Yao;  Guo Qi;  Lu Wu;  Zhang Xiao-Fu;  Zheng Qi-Wen;  Cui Jiang-Wei;  Li Yu-Dong;  Zhou Dong
Adobe PDF(235Kb)  |  Favorite  |  View/Download:137/1  |  Submit date:2013/11/07
Ferroelectric Random Memory  Ionizing Radiation Effects  Annealing Characteristics