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空间高能粒子对纳米器件栅介质可靠性影响的研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  马腾
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金属氧化物半导体  辐射效应  可靠性  辐射诱导泄漏电流  介质经时击穿  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
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Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
红外与激光工程, 2018, 卷号: 47, 期号: 9, 页码: 214-219
Authors:  马腾;  苏丹丹;  周航;  郑齐文;  崔江维;  魏莹;  余学峰;  郭旗
Favorite  |  View/Download:20/0  |  Submit date:2018/10/18
场效应晶体管  可靠性  栅氧经时击穿  Γ射线  
质子辐照对130nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
现代应用物理, 2018, 卷号: 8, 期号: 4
Authors:  马腾;  崔江维;  郑齐文;  魏莹;  赵京昊;  梁晓雯;  余学峰;  郭旗
Adobe PDF(793Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/07/20
辐射诱导泄漏电流  栅氧经时击穿  可靠性  质子辐照  部分耗尽soi  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
γ射线和电子束对SOI MOSFET栅介质可靠性影响研究 学位论文
硕士, 北京: 中国科学院大学, 2017
Authors:  苏丹丹
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Mosfet  Tddb  辐射效应  可靠性  
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
Authors:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Liu, Y (Liu, Yuan);  Zeng, JZ (Zeng, Junzhe);  Zhang, X (Zhang, Xiang);  Wang, TH (Wang, Tianhui)
Adobe PDF(705Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency  
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
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星用纳米MOS器件的总剂量辐射效应与NBTI效应研究 学位论文
硕士, 北京: 中国科学院大学, 2016
Authors:  余德昭
Adobe PDF(1666Kb)  |  Favorite  |  View/Download:134/0  |  Submit date:2016/09/27
Mosfet  辐射效应  Nbti  可靠性