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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
View  |  Adobe PDF(1450Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  周航
Adobe PDF(3489Kb)  |  Favorite  |  View/Download:52/0  |  Submit date:2017/09/26
Cmos  热载流子  辐射效应  重离子辐照  Tddb  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
View  |  Adobe PDF(496Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
超深亚微米互补金属氧化物半导体器件的剂量率效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 7, 页码: 258-263
Authors:  郑齐文;  崔江维;  王汉宁;  周航;  余徳昭;  魏莹;  苏丹丹
View  |  Adobe PDF(520Kb)  |  Favorite  |  View/Download:110/0  |  Submit date:2016/06/02
总剂量辐射效应  超深亚微米  金属氧化物半导体场效应晶体管  静态随机存储器  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
View  |  Adobe PDF(406Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory  
静态随机存储器总剂量辐射损伤机制及试验方法研究 学位论文
, 北京: 中国科学院大学, 2015
Authors:  郑齐文
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大规模集成电路  总剂量辐射  静态随机存储器  损伤机制  试验方法  
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng);  Lu, W (Lu Wu);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
View  |  Adobe PDF(315Kb)  |  Favorite  |  View/Download:24/0  |  Submit date:2017/09/21
Total Dose Irradiation  Static Random Access Memory  Functional Failure Mode  
微纳大规模集成电路SRAM的总剂量辐射效应及评估方法研究 学位论文
, 北京: 中国科学院大学, 2014
Authors:  丛忠超
Adobe PDF(1720Kb)  |  Favorite  |  View/Download:207/0  |  Submit date:2014/09/02
Sram  测试系统  辐照偏置  静态功耗电流  失效模式  
新型非易失存储器电离辐射效应及机理研究 学位论文
, 北京: 中国科学院大学, 2014
Authors:  张兴尧
Adobe PDF(2943Kb)  |  Favorite  |  View/Download:323/2  |  Submit date:2014/08/05
新型非易失存储器  传统非易失存储器  总剂量效应  辐射敏感参数