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Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
Adobe PDF(522Kb)  |  Favorite  |  View/Download:58/0  |  Submit date:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
DroidDet: Effective and robust detection of android malware using static analysis along with rotation forest model 期刊论文
NEUROCOMPUTING, 2018, 卷号: 272, 期号: 1, 页码: 638-646
Authors:  Zhu, HJ (Zhu, Hui-Juan);  You, ZH (You, Zhu-Hong);  Zhu, ZX (Zhu, Ze-Xuan);  Shi, WL (Shi, Wei-Lei);  Chen, X (Chen, Xing);  Cheng, L (Cheng, Li)
Adobe PDF(1051Kb)  |  Favorite  |  View/Download:43/1  |  Submit date:2018/01/02
Rotation Forests  Malware Detection  Neural Network  Mobile Phones  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
Adobe PDF(951Kb)  |  Favorite  |  View/Download:78/1  |  Submit date:2016/12/12
Sige Hbts  Tid  Eldrs  Annealing  
超深亚微米互补金属氧化物半导体器件的剂量率效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 7, 页码: 258-263
Authors:  郑齐文;  崔江维;  王汉宁;  周航;  余徳昭;  魏莹;  苏丹丹
Adobe PDF(520Kb)  |  Favorite  |  View/Download:110/0  |  Submit date:2016/06/02
总剂量辐射效应  超深亚微米  金属氧化物半导体场效应晶体管  静态随机存储器  
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
Adobe PDF(406Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory