XJIPC OpenIR

Browse/Search Results:  1-10 of 75 Help

Selected(0)Clear Items/Page:    Sort:
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:28/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
Adobe PDF(2605Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2019/06/21
总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
核苷类抗丙型肝炎病毒和三氮唑类抗真菌化合物的合成研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  朱富强
Adobe PDF(5117Kb)  |  Favorite  |  View/Download:63/0  |  Submit date:2018/07/06
丙型肝炎病毒  核糖核苷  磷酸酯前药  三氮唑类抗真菌药物  艾氟康 唑  绿色合成路线与工艺  
空间高能粒子对纳米器件栅介质可靠性影响的研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  马腾
Adobe PDF(2664Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/07/06
金属氧化物半导体  辐射效应  可靠性  辐射诱导泄漏电流  介质经时击穿  
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
Adobe PDF(522Kb)  |  Favorite  |  View/Download:59/0  |  Submit date:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2018/08/14
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:42/0  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
Adobe PDF(713Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2018/05/07
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:32/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1320Kb)  |  Favorite  |  View/Download:74/0  |  Submit date:2018/07/06
65nm  负偏压温度不稳定性  沟道宽度