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Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
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Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
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Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
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Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
CMOS图像传感器辐射效应的测试技术 学位论文
硕士, 北京: 中国科学院大学, 2016
Authors:  王帆
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Cmos图像传感器  测试方法  辐射效应  电离总剂量效应  位移损伤效应  Rts噪声  
SiGe HBT单粒子效应敏感区域分布与加固设计研究 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  李培
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不同结构sige Hbt  单粒子效应  三维数值模拟仿真  激光微束试验  伪集电极加固  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment  
高速深亚微米CMOS模数/数模转换器辐射效应、损伤机理及评估方法研究 学位论文
博士, 北京: 中国科学院大学, 2014
Authors:  吴雪
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深亚微米  高速模数/数模转换器  辐照偏置条件  总剂量效应  单粒子效应  加速评估方法  
3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4, 页码: 60-65
Authors:  Jinxin, Zhang;  Hongxia, Guo;  Lin, Wen;  Qi, Guo;  Jiangwei, Cui;  Xin, Wang;  Wei, Deng;  Qiwen, Zhen;  Xue, Fan;  Yao, Xiao;  Hongxia, G.
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