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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
Adobe PDF(2605Kb)  |  Favorite  |  View/Download:17/0  |  Submit date:2019/06/21
总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
空间高能粒子对纳米器件栅介质可靠性影响的研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  马腾
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金属氧化物半导体  辐射效应  可靠性  辐射诱导泄漏电流  介质经时击穿  
Influence of Fluorine on Electronic Structures and Nonlinear Optical Effects of A Series of Borate Crystals 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  Beenish Bashir
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D10-cation Systems  Borate Fluorides  Fluorooxoborates  First-principles Calculations  Structure-property Relationship  
gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64
Authors:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Zhang, XY (Zhang, Xing-Yao);  Deng, LJ (Deng, L. J.);  Yu, Q (Yu, Qi);  Yin, Y (Yin, You);  Hosaka, S (Hosaka, Sumio)
Adobe PDF(1207Kb)  |  Favorite  |  View/Download:59/0  |  Submit date:2018/01/31
Gamma-ray  Hafnium Oxide  Radiation  Resistive Switching  Total Ionizing Dose  
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
Adobe PDF(522Kb)  |  Favorite  |  View/Download:61/0  |  Submit date:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Co2SiO4/SiO2/RGO nanosheets: Boosting the lithium storage capability of tetravalent Si by using highly-dispersed Co element 期刊论文
ELECTROCHIMICA ACTA, 2018, 卷号: 282, 期号: 8, 页码: 609-617
Authors:  Zhao, YM (Zhao, Yiming);  Zheng, LH (Zheng, Lihua);  Wu, H (Wu, Hao);  Chen, H (Chen, Huan);  Su, LW (Su, Liwei);  Wang, LB (Wang, Lianbang);  Wang, YH (Wang, Yuanhao);  Ren, MM (Ren, Manman)
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Cobalt Silicate  Energy Storage  Graphene  Lithium-ion Batteries  Tetravalent Silicon  
Fabrication and properties of high B value [Mn1.56Co0.96Ni0.48O4](1-x)[SrMnO3](x) (0 <= x <= 0.5) spinel-perovskite composite NTC films 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9613-9620
Authors:  Zhang, J (Zhang, Jun);  Kong, WW (Kong, Wenwen);  Chang, AM (Chang, Aimin)
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总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1083Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/03/19
65 Nm Nmosfet  总剂量效应  热载流子效应  
γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
红外与激光工程, 2018, 卷号: 47, 期号: 9, 页码: 214-219
Authors:  马腾;  苏丹丹;  周航;  郑齐文;  崔江维;  魏莹;  余学峰;  郭旗
Favorite  |  View/Download:24/0  |  Submit date:2018/10/18
场效应晶体管  可靠性  栅氧经时击穿  Γ射线