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Influence of channel length and layout on TID for 0.18 mu m NMOS transistors 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2013, 卷号: 24, 期号: 6, 页码: 20-25
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Guo Qi;  He Chengfa;  Li Yudong;  Xi Shanbin;  Sun Jing;  Wen Lin
Adobe PDF(617Kb)  |  Favorite  |  View/Download:133/0  |  Submit date:2014/11/11
Sces  Dibl  Clm  Enclosed-layout