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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
Authors:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰);  Guo Q(郭旗)
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静态随机存储器总剂量辐射损伤机制及试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2015
Authors:  郑齐文
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大规模集成电路  总剂量辐射  静态随机存储器  损伤机制  试验方法  
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng);  Lu, W (Lu Wu);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
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Total Dose Irradiation  Static Random Access Memory  Functional Failure Mode  
Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 期刊论文
Chinese Physics B, 2014, 卷号: 23, 期号: 10, 页码: 366-372
Authors:  Zheng, Qi-Wen;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Guo, Qi;  Ren, Di-Yuan;  Cong, Zhong-Chao;  Zhou, Hang
Adobe PDF(473Kb)  |  Favorite  |  View/Download:189/0  |  Submit date:2014/11/11
Total Dose Irradiation  Static Random Access Memory  Pattern Imprinting  Deep Sub-micron  
Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 13
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Xi Shan-Bin;  Guo Qi;  Li Yu-Dong
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0.18 Mu m  Narrow-channel Nmos Transistor  60co Gamma  Rince