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Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
Authors:  Chen, ZJ (Chen, Zhuojun);  Ding, D (Ding, Ding);  Dong, YM (Dong, Yemin);  Shan, Y (Shan, Yi);  Zhou, SX (Zhou, Shuxing);  Hu, YY (Hu, Yuanyuan);  Zheng, YL (Zheng, Yunlong);  Peng, C (Peng, Chao);  Chen, RM (Chen, Rongmei)
Adobe PDF(3470Kb)  |  Favorite  |  View/Download:38/0  |  Submit date:2018/05/07
Phase-locked Loop (Pll)  Phase Noise  Reference Spur  Total Ionizing Dose (Tid)  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
Adobe PDF(3489Kb)  |  Favorite  |  View/Download:58/0  |  Submit date:2017/09/26
Cmos  热载流子  辐射效应  重离子辐照  Tddb  
γ射线和电子束对SOI MOSFET栅介质可靠性影响研究 学位论文
硕士, 北京: 中国科学院大学, 2017
Authors:  苏丹丹
Adobe PDF(6461Kb)  |  Favorite  |  View/Download:55/0  |  Submit date:2017/09/26
Mosfet  Tddb  辐射效应  可靠性  
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
Adobe PDF(686Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2017/12/14
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei);  Li, B (Li Bin);  Lu, YD (Lu Yu-Dong)
Adobe PDF(574Kb)  |  Favorite  |  View/Download:25/0  |  Submit date:2018/01/25
SilicOn On Insulator  Ion implantatIon  Ionizing Radiation  Low Frequency Noise  
新型非易失存储器电离辐射效应及机理研究 学位论文
博士, 北京: 中国科学院大学, 2014
Authors:  张兴尧
Adobe PDF(2943Kb)  |  Favorite  |  View/Download:325/2  |  Submit date:2014/08/05
新型非易失存储器  传统非易失存储器  总剂量效应  辐射敏感参数  
微纳大规模集成电路SRAM的总剂量辐射效应及评估方法研究 学位论文
硕士, 北京: 中国科学院大学, 2014
Authors:  丛忠超
Adobe PDF(1720Kb)  |  Favorite  |  View/Download:211/0  |  Submit date:2014/09/02
Sram  测试系统  辐照偏置  静态功耗电流  失效模式  
The total dose effects on the 1/f noise of deep submicron CMOS transistors 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 2, 页码: 7015-7021
Authors:  Hu, Rongbin;  Wang, Yuxin;  Lu, Wu
Adobe PDF(951Kb)  |  Favorite  |  View/Download:164/0  |  Submit date:2014/11/11
Total dose effects on the matching properties of deep submicron MOS transistors 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 6
Authors:  Wang, Yuxin;  Hu, Rongbin;  Li, Ruzhang;  Chen, Guangbing;  Fu, Dongbing;  Lu, Wu
Adobe PDF(580Kb)  |  Favorite  |  View/Download:145/0  |  Submit date:2014/11/11
Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 7, 页码: 074008-1-074008-6
Authors:  Zheng, Qiwen;  Yu, Xuefeng;  Cui, Jiangwei;  Guo, Qi;  Cong, Zhongchao;  Zhang, Xingyao;  Deng, Wei;  Zhang, Xiaofu;  Wu, Zhengxin
Adobe PDF(645Kb)  |  Favorite  |  View/Download:152/0  |  Submit date:2014/11/11
Silicon-on-insulator  Hot-carrier Effect  Hump  Back Gate