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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
View  |  Adobe PDF(1382Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
Authors:  Chen, ZJ (Chen, Zhuojun);  Ding, D (Ding, Ding);  Dong, YM (Dong, Yemin);  Shan, Y (Shan, Yi);  Zhou, SX (Zhou, Shuxing);  Hu, YY (Hu, Yuanyuan);  Zheng, YL (Zheng, Yunlong);  Peng, C (Peng, Chao);  Chen, RM (Chen, Rongmei)
View  |  Adobe PDF(3470Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/05/07
Phase-locked Loop (Pll)  Phase Noise  Reference Spur  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1450Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
Authors:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ];  Li, BH (Li, Binhong)[ 1,2 ];  Zhang, XY (Zhang, Xingyao)[ 4 ];  Zhu, HP (Zhu, Huiping)[ 1,2 ];  Yin, HX (Yin, Huaxiang)[ 1,3 ];  Guo, Q (Guo, Qi)[ 4 ];  Luo, JJ (Luo, Jiajun)[ 1,2 ];  Han, ZS (Han, Zhengsheng)[ 1,2 ]
Adobe PDF(3023Kb)  |  Favorite  |  View/Download:44/0  |  Submit date:2018/09/18
Anneal  Finfet  On-state Bias  Total Ionizing Dose (Tid)  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
3T和4T-CMOS图像传感器空间辐射效应及损伤机理研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  汪波
Adobe PDF(3966Kb)  |  Favorite  |  View/Download:599/0  |  Submit date:2016/09/27
Cmos图像传感器  钳位光电二极管  电离总剂量效应  位移损伤效应  抗辐射加固  
混合工艺DAC及ADC的总剂量效应研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  王信
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Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui);  Wang, X (Wang, Xin)[ 2 ];  Li, P (Li, Pei);  Liu, M (Liu, Mohan)
Adobe PDF(1341Kb)  |  Favorite  |  View/Download:97/0  |  Submit date:2016/12/12
Bias Conditions  Co-60 Gamma Irradiation  Sige Hbt  Total Ionizing Dose Effect  
超深亚微米互补金属氧化物半导体器件的剂量率效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 7, 页码: 258-263
Authors:  郑齐文;  崔江维;  王汉宁;  周航;  余徳昭;  魏莹;  苏丹丹
Adobe PDF(520Kb)  |  Favorite  |  View/Download:110/0  |  Submit date:2016/06/02
总剂量辐射效应  超深亚微米  金属氧化物半导体场效应晶体管  静态随机存储器