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体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
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总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
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CMOS active pixel sensor (APS)  SEE  Heavy ion  
高总剂量水平双极器件剂量率效应及加速评估试验方法的研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  李小龙
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双极晶体管  剂量率效应  低剂量率损伤增强效应  损伤机制  变温加速评估方法  
空间高能粒子对纳米器件栅介质可靠性影响的研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  马腾
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金属氧化物半导体  辐射效应  可靠性  辐射诱导泄漏电流  介质经时击穿  
国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS 期刊论文
半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 369-374
Authors:  魏昕宇;  陆妩;  李小龙;  王信;  孙静;  于新;  姚帅;  刘默寒;  郭旗
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国产pnp型双极晶体管  宽总剂量范围  低剂量率损伤增强效应(Eldrs)  辐射损伤  剂量率  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
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65 Nm Nmosfet  总剂量效应  热载流子效应  
质子辐照对130nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
现代应用物理, 2018, 卷号: 8, 期号: 4
Authors:  马腾;  崔江维;  郑齐文;  魏莹;  赵京昊;  梁晓雯;  余学峰;  郭旗
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辐射诱导泄漏电流  栅氧经时击穿  可靠性  质子辐照  部分耗尽soi  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
Adobe PDF(567Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2018/11/20
Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency