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gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64
Authors:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Zhang, XY (Zhang, Xing-Yao);  Deng, LJ (Deng, L. J.);  Yu, Q (Yu, Qi);  Yin, Y (Yin, You);  Hosaka, S (Hosaka, Sumio)
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Gamma-ray  Hafnium Oxide  Radiation  Resistive Switching  Total Ionizing Dose  
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
Authors:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ];  Li, BH (Li, Binhong)[ 1,2 ];  Zhang, XY (Zhang, Xingyao)[ 4 ];  Zhu, HP (Zhu, Huiping)[ 1,2 ];  Yin, HX (Yin, Huaxiang)[ 1,3 ];  Guo, Q (Guo, Qi)[ 4 ];  Luo, JJ (Luo, Jiajun)[ 1,2 ];  Han, ZS (Han, Zhengsheng)[ 1,2 ]
Adobe PDF(3023Kb)  |  Favorite  |  View/Download:44/0  |  Submit date:2018/09/18
Anneal  Finfet  On-state Bias  Total Ionizing Dose (Tid)  
基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现 期刊论文
发光学报, 2017, 卷号: 38, 期号: 6, 页码: 828-834
Authors:  荀明珠;  李豫东;  郭旗;  何承发;  于新;  于钢;  文林;  张兴尧
Adobe PDF(1843Kb)  |  Favorite  |  View/Download:99/0  |  Submit date:2017/08/01
抗辐射加固  试验装置  晶圆级器件  X射线辐照  辐射效应  参数提取  
钙钛矿基有机-无机杂化材料光/电性能研究 学位论文
博士, 北京: 中国科学院大学, 2015
Authors:  赵鹏君
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铁酸铋  有机-无机杂化钙钛矿  锰酸钙  自发极化  光电性能  
高介电栅介质材料HfO2掺杂后的物理电学特性(英文) 期刊论文
功能材料与器件学报, 2009, 卷号: 15, 期号: 1, 页码: 71-74
Authors:  武德起;  姚金城;  赵红生;  张东炎;  常爱民;  李锋;  周阳
Adobe PDF(393Kb)  |  Favorite  |  View/Download:224/12  |  Submit date:2012/11/29
高介电栅介质材料  激光分子束外延  二氧化铪  
功能化表面活性剂催化的无溶剂酯化反应研究 学位论文
, 北京: 中国科学院研究生院, 2008
Authors:  李刚
Adobe PDF(855Kb)  |  Favorite  |  View/Download:162/0  |  Submit date:2014/10/13
酯化反应  无溶剂  功能化表面活性剂(fs)