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Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa)
Adobe PDF(455Kb)  |  Favorite  |  View/Download:85/0  |  Submit date:2016/12/13
Complementary Metal Oxide Semiconductor Image Sensor  Total Ionizing Dose Radiation Effect  Pinned Photodiode  Full Well Chargecapacity  
基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究 期刊论文
物理学报, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  王帆;  李豫东;  郭旗;  汪波;  张兴尧;  文林;  何承发
Adobe PDF(590Kb)  |  Favorite  |  View/Download:157/0  |  Submit date:2016/03/01
互补金属氧化物半导体图像传感器  电离总剂量效应  钳位二极管  满阱容量