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总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1083Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/03/19
65 Nm Nmosfet  总剂量效应  热载流子效应  
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
Authors:  Chen, ZJ (Chen, Zhuojun);  Ding, D (Ding, Ding);  Dong, YM (Dong, Yemin);  Shan, Y (Shan, Yi);  Zhou, SX (Zhou, Shuxing);  Hu, YY (Hu, Yuanyuan);  Zheng, YL (Zheng, Yunlong);  Peng, C (Peng, Chao);  Chen, RM (Chen, Rongmei)
Adobe PDF(3470Kb)  |  Favorite  |  View/Download:40/0  |  Submit date:2018/05/07
Phase-locked Loop (Pll)  Phase Noise  Reference Spur  Total Ionizing Dose (Tid)  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Wei, Y (Wei Ying)
Adobe PDF(1049Kb)  |  Favorite  |  View/Download:22/0  |  Submit date:2018/01/25
Influence of channel length and layout on TID for 0.18 mu m NMOS transistors 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2013, 卷号: 24, 期号: 6, 页码: 20-25
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Guo Qi;  He Chengfa;  Li Yudong;  Xi Shanbin;  Sun Jing;  Wen Lin
Adobe PDF(617Kb)  |  Favorite  |  View/Download:135/0  |  Submit date:2014/11/11
Sces  Dibl  Clm  Enclosed-layout