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空间高能粒子对纳米器件栅介质可靠性影响的研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  马腾
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金属氧化物半导体  辐射效应  可靠性  辐射诱导泄漏电流  介质经时击穿  
基于四面体基元响应机理的深紫外非线性光学材料设计研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  雷兵华
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第一性原理  非线性光学  光学各向异性  四面体基元  
Effect of sputtering power on structural, cationic distribution and optical properties of Mn2Zn0.25Ni0.75O4 thin films 期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 435, 期号: 3, 页码: 815-821
Authors:  Zhang, XB (Zhang, Xiaobo);  Ren, W (Ren, Wei);  Kong, WW (Kong, Wenwen);  Zhou, Q (Zhou, Qing);  Wang, L (Wang, Lei);  Bian, L (Bian, Liang);  Xu, JB (Xu, Jinbao);  Chang, AM (Chang, Aimin);  Jiang, CQ (Jiang, Chunqi)
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Rf Sputtering  Mnz Deposition  Cation Valance State  Microstructure  Optical Absorption  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Co2SiO4/SiO2/RGO nanosheets: Boosting the lithium storage capability of tetravalent Si by using highly-dispersed Co element 期刊论文
ELECTROCHIMICA ACTA, 2018, 卷号: 282, 期号: 8, 页码: 609-617
Authors:  Zhao, YM (Zhao, Yiming);  Zheng, LH (Zheng, Lihua);  Wu, H (Wu, Hao);  Chen, H (Chen, Huan);  Su, LW (Su, Liwei);  Wang, LB (Wang, Lianbang);  Wang, YH (Wang, Yuanhao);  Ren, MM (Ren, Manman)
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Cobalt Silicate  Energy Storage  Graphene  Lithium-ion Batteries  Tetravalent Silicon  
Fabrication and properties of high B value [Mn1.56Co0.96Ni0.48O4](1-x)[SrMnO3](x) (0 <= x <= 0.5) spinel-perovskite composite NTC films 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9613-9620
Authors:  Zhang, J (Zhang, Jun);  Kong, WW (Kong, Wenwen);  Chang, AM (Chang, Aimin)
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Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
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65 Nm Nmosfet  总剂量效应  热载流子效应  
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
Authors:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ];  Li, BH (Li, Binhong)[ 1,2 ];  Zhang, XY (Zhang, Xingyao)[ 4 ];  Zhu, HP (Zhu, Huiping)[ 1,2 ];  Yin, HX (Yin, Huaxiang)[ 1,3 ];  Guo, Q (Guo, Qi)[ 4 ];  Luo, JJ (Luo, Jiajun)[ 1,2 ];  Han, ZS (Han, Zhengsheng)[ 1,2 ]
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Anneal  Finfet  On-state Bias  Total Ionizing Dose (Tid)  
离子型表面活性剂分子在十六烷/水乳液内界面的吸附动力学研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  杨方源
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水-油界面  乳液  表面活性剂  电迁移率  Zeta电位  二次谐波