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高总剂量水平双极器件剂量率效应及加速评估试验方法的研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  李小龙
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双极晶体管  剂量率效应  低剂量率损伤增强效应  损伤机制  变温加速评估方法  
空间用四结键合太阳能电池子电池辐射效应研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  赵晓凡
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四结键合太阳能电池  位移损伤  少子扩散长度  辐射效应  
CMOS图像传感器在质子辐照下产生热像素的规律与机理研究 学位论文
硕士, 北京: 中国科学院大学, 2018
Authors:  王田晖
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Cmos图像传感器  热像素  质子辐照  位移损伤  暗信号  
Influence of Fluorine on Electronic Structures and Nonlinear Optical Effects of A Series of Borate Crystals 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  Beenish Bashir
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D10-cation Systems  Borate Fluorides  Fluorooxoborates  First-principles Calculations  Structure-property Relationship  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
含d0、d10电子组态的硼酸盐二阶非线性光学基元的DFT研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  苏欣
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非线性光学材料  第一原理方法  含d0  电子结构  D10的阳离子贡献  
基于国产双多晶自对准工艺的双极晶体管辐射效应研究 学位论文
硕士, 北京: 中国科学院大学, 2017
Authors:  贾金成
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双多晶自动准  双极晶体管  60co-γ辐射  基极  发射极尺寸  辐射损伤  Eldrs  
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
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Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure