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高总剂量水平双极器件剂量率效应及加速评估试验方法的研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  李小龙
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双极晶体管  剂量率效应  低剂量率损伤增强效应  损伤机制  变温加速评估方法  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
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Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui);  Wang, X (Wang, Xin)[ 2 ];  Li, P (Li, Pei);  Liu, M (Liu, Mohan)
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Bias Conditions  Co-60 Gamma Irradiation  Sige Hbt  Total Ionizing Dose Effect  
Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
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Sige Hbts  Tid  Eldrs  Annealing  
CCD空间累积辐射效应及损伤机理研究 学位论文
博士, 北京: 中国科学院大学, 2015
Authors:  文林
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电荷耦合器件  电离总剂量效应  位移效应  损伤机理  敏感参数  基本单元  
SiGe HBT单粒子效应敏感区域分布与加固设计研究 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  李培
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不同结构sige Hbt  单粒子效应  三维数值模拟仿真  激光微束试验  伪集电极加固