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辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
Influence of channel length and layout on TID for 0.18 mu m NMOS transistors 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2013, 卷号: 24, 期号: 6, 页码: 20-25
Authors:  Wu Xue;  Lu Wu;  Wang Xin;  Guo Qi;  He Chengfa;  Li Yudong;  Xi Shanbin;  Sun Jing;  Wen Lin
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Sces  Dibl  Clm  Enclosed-layout