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高总剂量水平双极器件剂量率效应及加速评估试验方法的研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  李小龙
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双极晶体管  剂量率效应  低剂量率损伤增强效应  损伤机制  变温加速评估方法  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS 期刊论文
半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 369-374
Authors:  魏昕宇;  陆妩;  李小龙;  王信;  孙静;  于新;  姚帅;  刘默寒;  郭旗
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国产pnp型双极晶体管  宽总剂量范围  低剂量率损伤增强效应(Eldrs)  辐射损伤  剂量率  
Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 8, 页码: 1-4
Authors:  Yu, X (Yu, Xin)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Yao, S (Yao, Shuai)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Sun, J (Sun, Jing)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Liu, MH (Liu, Mo-Han)[ 1,2 ];  Li, XL (Li, Xiao-Long)[ 1,2,3 ]
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The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
基于国产双多晶自对准工艺的双极晶体管辐射效应研究 学位论文
硕士, 北京: 中国科学院大学, 2017
Authors:  贾金成
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双多晶自动准  双极晶体管  60co-γ辐射  基极  发射极尺寸  辐射损伤  Eldrs  
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
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Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation