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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
星用超深亚微米CMOS器件辐射效应及其可靠性研究 学位论文
博士, 北京: 中国科学院研究生院, 2012
Authors:  崔江维
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超深亚微米器件  总剂量辐射  热载流子效应  负偏置温度不稳定性  相互作用  
Total dose ionizing irradiation effects on a static random access memory field programmable gate array 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 3, 页码: 42-47
Authors:  Gao, Bo;  Yu, Xuefeng;  Ren, Diyuan;  Li, Yudong;  Sun, Jing;  Cui, Jiangwei;  Wang, Yiyuan;  Li, Ming
Adobe PDF(337Kb)  |  Favorite  |  View/Download:148/0  |  Submit date:2014/11/11
Double humps and radiation effects of SOI NMOSFET 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6
Authors:  Cui, Jiangwei;  Yu, Xuefeng;  Ren, Diyuan;  He, Chengfa;  Gao, Bo;  Li, Ming;  Lu, Jian
Adobe PDF(259Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2014/11/11
Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 4, 页码: 41-45
Authors:  Gao, Bo;  Yu, Xuefeng;  Ren, Diyuan;  Liu, Gang;  Wang, Yiyuan;  Sun, Jing;  Cui, Jiangwei
Adobe PDF(650Kb)  |  Favorite  |  View/Download:204/0  |  Submit date:2014/11/11