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高总剂量水平双极器件剂量率效应及加速评估试验方法的研究 学位论文
博士, 北京: 中国科学院大学, 2018
Authors:  李小龙
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双极晶体管  剂量率效应  低剂量率损伤增强效应  损伤机制  变温加速评估方法  
基于钴源辐照的光释光测年方法研究 期刊论文
科技视界, 2018, 期号: 11, 页码: 91-93
Authors:  邹德洋;  何承发;  陆妩;  张峰;  葛本伟
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钴源  光释光测年  石英  能量沉积  
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
Authors:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
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Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect  
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
Authors:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin);  He, CF (He, Chengfa);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mohan);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xinyu)查看 ResearcherID 和 ORCID
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Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
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Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
Authors:  Chen, ZJ (Chen, Zhuojun);  Ding, D (Ding, Ding);  Dong, YM (Dong, Yemin);  Shan, Y (Shan, Yi);  Zhou, SX (Zhou, Shuxing);  Hu, YY (Hu, Yuanyuan);  Zheng, YL (Zheng, Yunlong);  Peng, C (Peng, Chao);  Chen, RM (Chen, Rongmei)
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Phase-locked Loop (Pll)  Phase Noise  Reference Spur  Total Ionizing Dose (Tid)  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose