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Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
Adobe PDF(406Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory  
典型运放、比较器的电离与位移辐射损伤效应 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  姜柯
Adobe PDF(2075Kb)  |  Favorite  |  View/Download:268/0  |  Submit date:2015/06/15
60coγ辐照源  质子辐射  电子辐射  中子辐射  双极器件  辐射效应  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:32/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
高速深亚微米CMOS模数/数模转换器辐射效应、损伤机理及评估方法研究 学位论文
博士, 北京: 中国科学院大学, 2014
Authors:  吴雪
Adobe PDF(4353Kb)  |  Favorite  |  View/Download:263/1  |  Submit date:2014/08/05
深亚微米  高速模数/数模转换器  辐照偏置条件  总剂量效应  单粒子效应  加速评估方法  
深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 22, 页码: 262-269
Authors:  王信;  陆妩;  吴雪;  马武英;  崔江维;  刘默寒;  姜柯
Adobe PDF(751Kb)  |  Favorite  |  View/Download:157/0  |  Submit date:2017/10/13
总剂量效应  N沟道金属氧化物场效应晶体管  寄生双极晶体管  Bandgap基准电压源  
Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 22
Authors:  Wang, X (Wang Xin);  Lu, W (Lu Wu);  Wu, X (Wu Xue);  Ma, WY (Ma Wu-Ying);  Cui, JW (Cui Jiang-Wei);  Liu, MH (Liu Mo-Han);  Jiang, K (Jiang Ke)
Adobe PDF(481Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/02/01
Total Dose Radiation  Nmosfet  Parasitic Transistor  Bandgap Voltage Reference  
国产PD CMOS/SOI器件和电路的辐照损伤效应及机理研究 学位论文
硕士, 北京: 中国科学院研究生院, 2008
Authors:  王改丽
Adobe PDF(2280Kb)  |  Favorite  |  View/Download:174/0  |  Submit date:2014/10/13
Pdsoi  Simox  总剂量辐射  辐射效应  背沟漏电