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一种P型负温度系数陶瓷材料的欧姆接触电极的制备方法
姚金城; 陈计好; 王军华; 王兵; 常爱民
2019-03-12
Rights Holder中国科学院新疆理化技术研究所
Subtype发明专利
Abstract

本发明涉及一种P型负温度系数陶瓷材料的欧姆接触电极的制备方法。该方法使用直流磁控溅射技术,选用现有的四元系钴锰铁锌P型负温度系数陶瓷材料为陶瓷基体,先在陶瓷基体表面蒸镀第一层35nm‑1200nm Pd或Ni作为过渡层,之后再蒸镀一层400nm的Ag作为焊接层,然后在温度400℃‑800℃快速退火,得到具有良好欧姆接触的电极。经检测结果表明,该电极具有良好的欧姆接触、牢固的附着力、良好的可焊性和稳定性。该方法采用功函数较高的金属作为过渡层,使金属和陶瓷体的接触电阻更低,并且过渡层还解决了P型负温度系数陶瓷烧渗银电极中银的渗透问题。

Application Date2018-11-15
Application NumberCN201811357352.7
Open (Notice) NumberCN109461556A
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/6391
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
姚金城,陈计好,王军华,等. 一种P型负温度系数陶瓷材料的欧姆接触电极的制备方法. CN109461556A[P]. 2019-03-12.
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