XJIPC OpenIR  > 材料物理与化学研究室
硼硫化钡中远红外非线性光学晶体及制备方法和应用
潘世烈; 李广卯; 武奎; 李昊; 杨志华
2018-09-28
Rights Holder中国科学院新疆理化技术研究所
Subtype发明专利
Abstract

本发明涉及一种硼硫化钡中远红外非线性光学晶体及制备方法和应用,该晶体的化学式为BaB2S4,分子量为287.20,非中心对称结构单晶,晶系为正交晶系,空间群为Cc,晶胞参数a=6.665(3)Å,b=15.727(6)Å,c=6.039(2)Å,β=110.987(4)°,Z=4,单胞体积V=591.0(4)Å3。采用将硫化钡或单质钡,单质硼,单质硫在真空条件下进行固相反应法和高温熔融法制备粉末纯样和单晶;通过本发明所述方法获得的硼硫化钡中远红外非线性光学晶体的纯样XRD图与理论值吻合;在2090nm的激光下,倍频效应是AgGaS2的0.7倍;获得毫米级晶体。

Application Date2018-06-15
Application NumberCN201810618675.0
Open (Notice) NumberCN108588840A
Document Type专利
Identifierhttp://ir.xjipc.cas.cn/handle/365002/6355
Collection材料物理与化学研究室
Recommended Citation
GB/T 7714
潘世烈,李广卯,武奎,等. 硼硫化钡中远红外非线性光学晶体及制备方法和应用. CN108588840A[P]. 2018-09-28.
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