Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb
Wang, DK (Wang, Dengkui)[ 1 ]; Chen, BK (Chen, Bingkun)[ 1 ]; Wei, ZP (Wei, Zhipeng)[ 1 ]; Fang, X (Fang, Xuan)[ 1 ]; Tang, JL (Tang, Jilong)[ 1 ]; Fang, D (Fang, Dan)[ 1 ]; Aierken, A (Aierken, Abuduwayiti)[ 2 ]; Wang, XH (Wang, Xiaohua)[ 1 ]; Maliya, H (Maliya, Heini)[ 2 ]; Guo, Q (Guo, Qi)[ 2 ]
2019
Source PublicationJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN0022-3697
Volume132Issue:9Pages:26-30
Abstract

Electron irradiation causes atomic displacement damage and produces point defects in semiconductor materials. The formation and variation of defects determine the optical properties of semiconductors during the irradiation process. In this paper, Te-doped GaSb was irradiated by 1 MeV electrons, with fluence of 1 x 10(15) electrons cm(-2), and its optical properties investigated by temperature-dependent photoluminescence (PL) before and after irradiation. After irradiation, the peak position had a blue-shift and intensity was significantly enhanced. The carrier concentration increased from 4.14 x 10(17) to 7.82 x 10(17) cm(-3) but mobility decreased from 2690 to 1780 cm(2) s(-1). These phenomena could be explained by the complex mechanism of defect decomposition, that is, the VGaGaSbTeSb defect decomposed into two independent V-Ga Ga-Sb and Te-Sb defects. To verify this mechanism, undoped GaSb was irradiated under the same conditions and PL results indicated that electron irradiation had little effect on optical properties of undoped GaSb.

KeywordGaSb Electron irradiation Photoluminescence Defects
DOI10.1016/j.jpcs.2019.04.015
Indexed BySCI
WOS IDWOS:000472124700004
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/6032
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Wang, DK ,Chen, BK ,Wei, ZP ,et al. Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2019,132(9):26-30.
APA Wang, DK .,Chen, BK .,Wei, ZP .,Fang, X .,Tang, JL .,...&Guo, Q .(2019).Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,132(9),26-30.
MLA Wang, DK ,et al."Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 132.9(2019):26-30.
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