Characteristics of p-i-n diodes basing on displacement damage detector
Sun, J (Sun Jing)[ 1,2 ]; Guo, Q (Guo Qi)[ 1 ]; Yu, X (Yu Xin)[ 1,2 ]; He, CF (He Cheng-Fa)[ 1 ]; Shi, WL (Shi Wei-Lei)[ 1 ]; Zhang, XY (Zhang Xing-Yao)[ 1 ]
2017
Source PublicationRADIATION PHYSICS AND CHEMISTRY
ISSN0969-806X
Volume139Issue:10Pages:11-16
Abstract

A displacement damage detector is designed and its characteristics are tested with 10 MeV proton irradiation. The testing result shows that the detector's readout changes linearly with the fluence of proton beam up to 10(12) proton/cm(2). However, a significant damage enhancement factor has been observed for 1.8 MeV electron irradiation when the classic non-ionizing energy loss (NIEL) is used for calculating equivalent displacement damage. Since the prediction based on classical NIEL model cannot fit low energy incident well, low energy particles induced displacement damage mechanism, defect generation, recombination and effective NIEL modification is discussed by molecular dynamics (MD) model. The effective NIEL is validated by measuring the detector's response under 1.8 MeV electron irradiation. The equivalent displacement damage between different particles is discussed through scaling factor, damage factor, and damage enhancement factor. By this method, the application of degradation function can be expanded to low energy particles by using effective NIEL.

KeywordDisplacement damage NIEL P-i-n photodiode Damage enhancement factor
DOI10.1016/j.radphyschem.2017.05.017
Indexed BySCI
WOS IDWOS:000403988900003
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5783
Collection中国科学院特殊环境功能材料与器件重点试验室
Corresponding AuthorYu, X (Yu Xin)[ 1,2 ]
Affiliation1.Xinjiang Tech Inst Phys & Chem CAS, Xinjiang Key Lab Elect Informat Mat & Device, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Sun, J ,Guo, Q ,Yu, X ,et al. Characteristics of p-i-n diodes basing on displacement damage detector[J]. RADIATION PHYSICS AND CHEMISTRY,2017,139(10):11-16.
APA Sun, J ,Guo, Q ,Yu, X ,He, CF ,Shi, WL ,&Zhang, XY .(2017).Characteristics of p-i-n diodes basing on displacement damage detector.RADIATION PHYSICS AND CHEMISTRY,139(10),11-16.
MLA Sun, J ,et al."Characteristics of p-i-n diodes basing on displacement damage detector".RADIATION PHYSICS AND CHEMISTRY 139.10(2017):11-16.
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