Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
Zheng, QW (Zheng, Qiwen)[ 1 ]; Cui, JW (Cui, Jiangwei)[ 1 ]; Xu, LW (Xu, Liewei)[ 2 ]; Ning, BX (Ning, Bingxu)[ 3 ]; Zhao, K (Zhao, Kai)[ 3 ]; Shen, MJ (Shen, Mingjie)[ 3 ]; Yu, XF (Yu, Xuefeng)[ 1 ]; Lu, W (Lu, Wu)[ 1 ]; He, CF (He, Chengfa)[ 1 ]; Ren, DY (Ren, Diyuan)[ 1 ]; Guo, Q (Guo, Qi)
2019
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
Volume66Issue:4Pages:702-709
Abstract

This paper investigates the total ionizing dose (TID) responses of forward body bias (FBB) ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) transistors, which are commonly used in commercial foundries. The experimental results demonstrate that TID-induced threshold voltage shift in FBB nMOSFET cannot be mitigated by applying biasing to back-gate (back-gate biasing). Bias condition dependence has also been explored, revealing that building up of the oxide-trapped charge (Not) in the buried oxide is affected by the electric field induced by the space charge. Moreover, the effect of threshold voltage option on TID responses of UTBB FD-SOI transistors with the undoped channel was first explored. Finally, the TID-enhanced back-gate biasing controlling of the threshold voltage was observed, which is a new phenomenon for the TID responses of UTBB FD-SOI transistors.

KeywordBack-gate biasing forward body bias (FBB) total ionizing dose (TID) ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
DOI10.1109/TNS.2019.2901755
Indexed BySCI
WOS IDWOS:000465237500003
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5727
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Fudan Univ, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China
3.Fudan Microelect Grp, Shanghai 200433, Peoples R China
Recommended Citation
GB/T 7714
Zheng, QW ,Cui, JW ,Xu, LW ,et al. Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2019,66(4):702-709.
APA Zheng, QW .,Cui, JW .,Xu, LW .,Ning, BX .,Zhao, K .,...&Guo, Q .(2019).Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,66(4),702-709.
MLA Zheng, QW ,et al."Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 66.4(2019):702-709.
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