Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
Xu, Y (Xu, Yan)[ 1,2 ]; Heini, M (Heini, Maliya)[ 2 ]; Shen, XB (Shen, Xiaobao)[ 2,3 ]; Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]; Zhao, XF (Zhao, Xiaofan)[ 2 ]; Sailai, M (Sailai, Momin)[ 2 ]; Lu, W (Lu, Wu)[ 2 ]; Tan, M (Tan, Ming)[ 5 ]; Wu, YY (Wu, Yuanyuan)[ 5 ]; Lu, SL (Lu, Shulong)[ 5 ]; Li, YD (Li, Yudong)[ 2 ]; Guo, Q (Guo, Qi)[ 2 ]
2019
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
ISSN0021-4922
Volume58Issue:3Pages:1-6
Abstract

3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze the irradiation damage. The result shows that the external quantum efficiency (EQE) and electrical parameters of the solar cell are degraded by both 3 MeV and 10 MeV proton irradiation. The degradation of EQE is larger in the longer wavelength region because of the higher probability of carrier lifetime reduction in the base region of the solar cell, and the 3 MeV proton produced more degradation of the electrical parameters of the solar cell than that of 10 MeV proton irradiation under the same displacement damage dose. (C) 2019 The Japan Society of Applied Physics

DOI10.7567/1347-4065/aafd19
Indexed BySCI
WOS IDWOS:000459885400001
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5685
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Xinjiang Univ, Sch Phys & Technol, Urumqi 830046, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China
4.Yunnan Normal Univ, Sch Energy & Environm, 756 Juxian Rd, Kunming 650500, Yunnan, Peoples R China
5.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou Ind Pk,Ruoshui Rd 398, Suzhou 215123, Peoples R China
Recommended Citation
GB/T 7714
Xu, Y ,Heini, M ,Shen, XB ,et al. Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2019,58(3):1-6.
APA Xu, Y .,Heini, M .,Shen, XB .,Aierken, A .,Zhao, XF .,...&Guo, Q .(2019).Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell.JAPANESE JOURNAL OF APPLIED PHYSICS,58(3),1-6.
MLA Xu, Y ,et al."Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell".JAPANESE JOURNAL OF APPLIED PHYSICS 58.3(2019):1-6.
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