Heavy ion-induced single event effects in active pixel sensor array
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]; Li, YD (Li, Yu-Dong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
2019
Source PublicationSOLID-STATE ELECTRONICS
ISSN0038-1101
Volume152Issue:2Pages:93-99
Abstract

The complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APSs) can easily be susceptible to heavy-ion radiation in space applications. In this paper, the single event effects (SEEs) of pinned photodiode (PPD) active pixel sensor array exposed to heavy ion (Tantalum, Xenon, Krypton) with linear energy transfer (LET) (37, 50.34 and 81.35 MeV.cm(2)/mg) have been studied. During the heavy ion exposure, all devices were fully functional and integration time was changed, no single event latch-up (SEL) and single event functional interrupt (SEFI) happened. However, dark background with pixel clusters in a frame, which indicates the single event transient (SET) effect were observed. The number of the pixel clusters, total collected charge and cluster size were analyzed in detail. Finally, SRIM simulations were conducted on a PPD in order to predict the number of the electron-hole pairs generated by a heavy ion.

KeywordCMOS active pixel sensor (APS) SEE Heavy ion
DOI10.1016/j.sse.2018.11.007
Indexed BySCI
WOS IDWOS:000453787900015
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5645
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorGuo, Q (Guo, Qi)[ 1,2 ]; Li, YD (Li, Yu-Dong)[ 1,2 ]
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Cai, YL ,Guo, Q ,Li, YD ,et al. Heavy ion-induced single event effects in active pixel sensor array[J]. SOLID-STATE ELECTRONICS,2019,152(2):93-99.
APA Cai, YL .,Guo, Q .,Li, YD .,Wen, L .,Zhou, D .,...&Wang, TH .(2019).Heavy ion-induced single event effects in active pixel sensor array.SOLID-STATE ELECTRONICS,152(2),93-99.
MLA Cai, YL ,et al."Heavy ion-induced single event effects in active pixel sensor array".SOLID-STATE ELECTRONICS 152.2(2019):93-99.
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