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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
Zhang, JX (Zhang, Jin-Xin)[ 1 ]; Guo, HX (Guo, Hong-Xia)[ 2,3 ]; Pan, XY (Pan, Xiao-Yu)[ 3 ]; Guo, Q (Guo, Qi)[ 2 ]; Zhang, FQ (Zhang, Feng-Qi)[ 3 ]; Feng, J (Feng, Juan)[ 1 ]; Wang, X (Wang, Xin)[ 2 ]; Wei, Y (Wei, Yin)[ 2 ]; Wu, XX (Wu, Xian-Xiang)[ 1 ]
2018
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume27Issue:10Pages:1-10
Abstract

The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to Co-60 gamma irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the gamma irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the gamma irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

KeywordSige Hbt Synergistic Effect Single Event Effects Total Ionizing Dose
DOI10.1088/1674-1056/27/10/108501
Indexed BySCI
WOS IDWOS:000448165900001
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5632
Collection材料物理与化学研究室
Affiliation1.Xidian Univ, Xian 710126, Shaanxi, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China
Recommended Citation
GB/T 7714
Zhang, JX ,Guo, HX ,Pan, XY ,et al. Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor[J]. CHINESE PHYSICS B,2018,27(10):1-10.
APA Zhang, JX .,Guo, HX .,Pan, XY .,Guo, Q .,Zhang, FQ .,...&Wu, XX .(2018).Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor.CHINESE PHYSICS B,27(10),1-10.
MLA Zhang, JX ,et al."Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor".CHINESE PHYSICS B 27.10(2018):1-10.
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