Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]; Li, YD (Li, Yu-Dong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]; Cai, YL (Cai, Yu-Long)[ 1,2,3 ]; Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
2018
发表期刊CHINESE PHYSICS B
ISSN1674-1056
卷号27期号:10页码:1-5
摘要

A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to Co-60 to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO2)/s and a total dose of 100 bad (SiO2), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

关键词Cmos Active Pixel Sensor Dark Current Quantum Efficiency
DOI10.1088/1674-1056/27/10/104207
收录类别SCI
WOS记录号WOS:000448162800002
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5631
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Guo, Q (Guo, Qi)[ 1,2 ]
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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GB/T 7714
Ma, LD ,Li, YD ,Wen, L ,et al. Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor[J]. CHINESE PHYSICS B,2018,27(10):1-5.
APA Ma, LD .,Li, YD .,Wen, L .,Feng, J .,Zhang, X .,...&Guo, Q .(2018).Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor.CHINESE PHYSICS B,27(10),1-5.
MLA Ma, LD ,et al."Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor".CHINESE PHYSICS B 27.10(2018):1-5.
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