Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]; Li, YD (Li, Yu-Dong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]; Cai, YL (Cai, Yu-Long)[ 1,2,3 ]; Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
2018
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume27Issue:10Pages:1-5
Abstract

A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to Co-60 to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO2)/s and a total dose of 100 bad (SiO2), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

KeywordCmos Active Pixel Sensor Dark Current Quantum Efficiency
DOI10.1088/1674-1056/27/10/104207
Indexed BySCI
WOS IDWOS:000448162800002
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5631
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorGuo, Q (Guo, Qi)[ 1,2 ]
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Ma, LD ,Li, YD ,Wen, L ,et al. Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor[J]. CHINESE PHYSICS B,2018,27(10):1-5.
APA Ma, LD .,Li, YD .,Wen, L .,Feng, J .,Zhang, X .,...&Guo, Q .(2018).Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor.CHINESE PHYSICS B,27(10),1-5.
MLA Ma, LD ,et al."Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor".CHINESE PHYSICS B 27.10(2018):1-5.
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