The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
Zheng, QW (Zheng, Qiwen)[ 1 ]; Cui, JW (Cui, Jiangwei)[ 1 ]; Lu, W (Lu, Wu)[ 1 ]; Guo, HX (Guo, Hongxia)[ 1 ]; Liu, J (Liu, Jie)[ 2 ]; Yu, XF (Yu, Xuefeng)[ 1 ]; Wei, Y (Wei, Ying)[ 1 ]; Wang, L (Wang, Liang)[ 3 ]; Liu, JQ (Liu, Jiaqi)[ 3 ]; He, CF (He, Chengfa)[ 1 ]; Guo, Q (Guo, Qi)
2018
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
卷号65期号:8页码:1920-1927
摘要

Increased heavy ion single-event upset (SEU) sensitivity of radiation-harden 65-nm dual interlocked cell (DICE) static random access memory (SRAM) is observed after total ionizing dose (TID) irradiation. The mechanism of the increased SEU cross section is analyzed by cell stability testing and TCAD simulation. Cell stability testing result shows that static noise margin of the cell is diminished by TID-induced threshold voltage shifts. Critical charge inducing SEU is reduced in TID-irradiated cell, because it is more susceptible to noise. Moreover, charge sharing of 65-nm DICE SRAM is a function of TID. TID-enhanced NMOSFET and PMOSFET charge sharing under heavy ion track in n-well is proposed and verified by TCAD simulation. The resistor of ground contacts of p-well is increased by positively charged oxide trapped charges induced by TID. More electrons are collected by NMOSFET owing to the more server well collapse induced by the raised resistor of ground contacts. Critical charge inducing SEU is reduced, and more carries are collected in TID irradiated device, so that the SEU sensitivity of 65-nm DICE SRAM is increased by TID.

关键词Charge Sharing Single-event Upset (Seu) Static Random Access Memory Total Ionizing Dose (Tid)
DOI10.1109/TNS.2018.2816583
收录类别SCI
WOS记录号WOS:000442363300061
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5571
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Zheng, QW (Zheng, Qiwen)[ 1 ]
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
3.Beijing Microelect Technol Inst, Dept Radiat Hardening Technol, Beijing 100076, Peoples R China
推荐引用方式
GB/T 7714
Zheng, QW ,Cui, JW ,Lu, W ,et al. The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(8):1920-1927.
APA Zheng, QW .,Cui, JW .,Lu, W .,Guo, HX .,Liu, J .,...&Guo, Q .(2018).The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(8),1920-1927.
MLA Zheng, QW ,et al."The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.8(2018):1920-1927.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
The Increased Single(1450KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Zheng, QW (Zheng, Qiwen)[ 1 ]]的文章
[Cui, JW (Cui, Jiangwei)[ 1 ]]的文章
[Lu, W (Lu, Wu)[ 1 ]]的文章
百度学术
百度学术中相似的文章
[Zheng, QW (Zheng, Qiwen)[ 1 ]]的文章
[Cui, JW (Cui, Jiangwei)[ 1 ]]的文章
[Lu, W (Lu, Wu)[ 1 ]]的文章
必应学术
必应学术中相似的文章
[Zheng, QW (Zheng, Qiwen)[ 1 ]]的文章
[Cui, JW (Cui, Jiangwei)[ 1 ]]的文章
[Lu, W (Lu, Wu)[ 1 ]]的文章
相关权益政策
暂无数据
收藏/分享
文件名: The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。