The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
Zheng, QW (Zheng, Qiwen)[ 1 ]; Cui, JW (Cui, Jiangwei)[ 1 ]; Lu, W (Lu, Wu)[ 1 ]; Guo, HX (Guo, Hongxia)[ 1 ]; Liu, J (Liu, Jie)[ 2 ]; Yu, XF (Yu, Xuefeng)[ 1 ]; Wei, Y (Wei, Ying)[ 1 ]; Wang, L (Wang, Liang)[ 3 ]; Liu, JQ (Liu, Jiaqi)[ 3 ]; He, CF (He, Chengfa)[ 1 ]; Guo, Q (Guo, Qi)
2018
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
Volume65Issue:8Pages:1920-1927
Abstract

Increased heavy ion single-event upset (SEU) sensitivity of radiation-harden 65-nm dual interlocked cell (DICE) static random access memory (SRAM) is observed after total ionizing dose (TID) irradiation. The mechanism of the increased SEU cross section is analyzed by cell stability testing and TCAD simulation. Cell stability testing result shows that static noise margin of the cell is diminished by TID-induced threshold voltage shifts. Critical charge inducing SEU is reduced in TID-irradiated cell, because it is more susceptible to noise. Moreover, charge sharing of 65-nm DICE SRAM is a function of TID. TID-enhanced NMOSFET and PMOSFET charge sharing under heavy ion track in n-well is proposed and verified by TCAD simulation. The resistor of ground contacts of p-well is increased by positively charged oxide trapped charges induced by TID. More electrons are collected by NMOSFET owing to the more server well collapse induced by the raised resistor of ground contacts. Critical charge inducing SEU is reduced, and more carries are collected in TID irradiated device, so that the SEU sensitivity of 65-nm DICE SRAM is increased by TID.

KeywordCharge Sharing Single-event Upset (Seu) Static Random Access Memory Total Ionizing Dose (Tid)
DOI10.1109/TNS.2018.2816583
Indexed BySCI
WOS IDWOS:000442363300061
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5571
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorZheng, QW (Zheng, Qiwen)[ 1 ]
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
3.Beijing Microelect Technol Inst, Dept Radiat Hardening Technol, Beijing 100076, Peoples R China
Recommended Citation
GB/T 7714
Zheng, QW ,Cui, JW ,Lu, W ,et al. The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(8):1920-1927.
APA Zheng, QW .,Cui, JW .,Lu, W .,Guo, HX .,Liu, J .,...&Guo, Q .(2018).The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(8),1920-1927.
MLA Zheng, QW ,et al."The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.8(2018):1920-1927.
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