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Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation
Yang, L (Yang, Ling)[ 1,2 ]; Zhang, QZ (Zhang, Qingzhu)[ 1,3 ]; Huang, YB (Huang, Yunbo)[ 1,2 ]; Zheng, ZS (Zheng, Zhongshan)[ 1,2 ]; Li, B (Li, Bo)[ 1,2 ]; Li, BH (Li, Binhong)[ 1,2 ]; Zhang, XY (Zhang, Xingyao)[ 4 ]; Zhu, HP (Zhu, Huiping)[ 1,2 ]; Yin, HX (Yin, Huaxiang)[ 1,3 ]; Guo, Q (Guo, Qi)[ 4 ]; Luo, JJ (Luo, Jiajun)[ 1,2 ]; Han, ZS (Han, Zhengsheng)[ 1,2 ]
2018
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
Volume65Issue:8Pages:1503-1510
Abstract

The total ionizing dose response of bulk nFinFETs with multiple gate lengths and multiple fins is investigated for on-state bias condition. Experiments and Technology Computer Aided Design simulations were performed to analyze the effect of the trapped charges in the gate oxide and shallow trench isolation (STI) oxide on the threshold voltage and transconductance of the devices. The increases in the threshold voltage and transconductance are observed after X-ray irradiation. The positive shift of the threshold voltage is caused by the net negative charges trapped in the gate oxide. The simulation results show that the trapped holes in the STI oxide reduce the electric field and increase the electron mobility in channel near the fin bottom, which is the major contribution to the increased transconductance. An interesting phenomenon was also observed that the threshold voltage continues to increase during the annealing process, whereas the transconductance decreases. These results suggest that there may also be a small amount of trapped holes in gate oxide during irradiation, and those trapped holes are compensated by electrons transporting from the silicon during the anneal, leading to further positive shift of the threshold voltage. Moreover, the decrease in transconductance is mainly introduced by the neutralization of the trapped holes at STI/silicon interface.

KeywordAnneal Finfet On-state Bias Total Ionizing Dose (Tid)
Indexed BySCI
WOS IDWOS:000442363300007
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5561
Collection材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
2.Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
3.Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang 830011, Peoples R China
Recommended Citation
GB/T 7714
Yang, L ,Zhang, QZ ,Huang, YB ,et al. Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(8):1503-1510.
APA Yang, L .,Zhang, QZ .,Huang, YB .,Zheng, ZS .,Li, B .,...&Han, ZS .(2018).Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(8),1503-1510.
MLA Yang, L ,et al."Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.8(2018):1503-1510.
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