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Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation
Yang, L (Yang, Ling)[ 1,2 ]; Zhang, QZ (Zhang, Qingzhu)[ 1,3 ]; Huang, YB (Huang, Yunbo)[ 1,2 ]; Zheng, ZS (Zheng, Zhongshan)[ 1,2 ]; Li, B (Li, Bo)[ 1,2 ]; Li, BH (Li, Binhong)[ 1,2 ]; Zhang, XY (Zhang, Xingyao)[ 4 ]; Zhu, HP (Zhu, Huiping)[ 1,2 ]; Yin, HX (Yin, Huaxiang)[ 1,3 ]; Guo, Q (Guo, Qi)[ 4 ]; Luo, JJ (Luo, Jiajun)[ 1,2 ]; Han, ZS (Han, Zhengsheng)[ 1,2 ]
2018
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
卷号65期号:8页码:1503-1510
摘要

The total ionizing dose response of bulk nFinFETs with multiple gate lengths and multiple fins is investigated for on-state bias condition. Experiments and Technology Computer Aided Design simulations were performed to analyze the effect of the trapped charges in the gate oxide and shallow trench isolation (STI) oxide on the threshold voltage and transconductance of the devices. The increases in the threshold voltage and transconductance are observed after X-ray irradiation. The positive shift of the threshold voltage is caused by the net negative charges trapped in the gate oxide. The simulation results show that the trapped holes in the STI oxide reduce the electric field and increase the electron mobility in channel near the fin bottom, which is the major contribution to the increased transconductance. An interesting phenomenon was also observed that the threshold voltage continues to increase during the annealing process, whereas the transconductance decreases. These results suggest that there may also be a small amount of trapped holes in gate oxide during irradiation, and those trapped holes are compensated by electrons transporting from the silicon during the anneal, leading to further positive shift of the threshold voltage. Moreover, the decrease in transconductance is mainly introduced by the neutralization of the trapped holes at STI/silicon interface.

关键词Anneal Finfet On-state Bias Total Ionizing Dose (Tid)
收录类别SCI
WOS记录号WOS:000442363300007
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5561
专题材料物理与化学研究室
作者单位1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
2.Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
3.Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang 830011, Peoples R China
推荐引用方式
GB/T 7714
Yang, L ,Zhang, QZ ,Huang, YB ,et al. Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(8):1503-1510.
APA Yang, L .,Zhang, QZ .,Huang, YB .,Zheng, ZS .,Li, B .,...&Han, ZS .(2018).Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(8),1503-1510.
MLA Yang, L ,et al."Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.8(2018):1503-1510.
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